SK hynix and Sandisk have jointly unveiled a new memory specification called High Bandwidth Flash (HBF), designed to bridge the gap between existing High Bandwidth Memory (HBM) and solid-state drives (SSDs) for data center applications.
HBF is positioned as a solution to the escalating bandwidth and capacity scalability demands within the rapidly expanding AI infrastructure.
The technology combines aspects of both HBM and NAND flash memory. SK hynix describes HBF as a novel memory layer offering high-speed data transfer akin to HBM, while significantly increasing capacity by leveraging NAND technology. The specification aims to provide a "dorky megazord" of memory solutions for the demanding needs of data centers.
Initially, HBF will support capacities of up to 512 GB. While this figure is modest by SSD standards, it represents a considerable increase compared to typical HBM capacities. The bandwidth for HBF is projected to range from 0.4 to 3 TB/s, a performance level that is expected to be highly beneficial for data-intensive workloads.
In a move towards broader industry adoption, SK hynix and Sandisk have released the HBF specification as an open standard through the Open Compute Project (OCP). This open approach permits any memory manufacturer to develop their own HBF solutions based on the disclosed standard.
Furthermore, the HBF specification incorporates the Universal Chiplet Interconnect Express (UCIe) connection interface. This integration is intended to enable compatibility with a variety of processors, including CPUs and GPUs, within a single package, thereby enhancing its versatility for system designers.
The announcement arrives amid a backdrop of significant demand and projected shortages in the memory market. SK hynix CEO Kwak Noh-Jung has indicated that customer demand is expected to exceed supply capacity even beyond 2030. Similarly, Samsung has warned of more severe shortages extending through 2027 and 2028. In response to these pressures, SK hynix is investing over $60 billion in new chip manufacturing facilities in South Korea, though memory prices are anticipated to rise by as much as 50% in the third quarter.